Tuesday, June 18, 2024
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Samsung Electronics announced the development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology, as well as the completion of product evaluation for compatibility with AMD.

“Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems.”

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