246 Samsung Electronics announced the development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology, as well as the completion of product evaluation for compatibility with AMD. “Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems.” You Might Be Interested In Apple set to revolutionize device performance with a new in-house chip design Angola’s National Bank Adopts SAP Innovations for Digital Transformation Asia’s middle powers must find their collective voice on AI governance Charlie Munger’s Top Investing Advice Across the Years CBA and Vodafone Join Forces to Combat SMS Scams Housing Market Predictions for 2024