302 Samsung Electronics announced the development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology, as well as the completion of product evaluation for compatibility with AMD. “Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems.” You Might Be Interested In TCS Q3 net rises 11% on cloud business, forex gains GCC Telecom Operators Gear Up for Growth Opportunities with Technology Reshaping Human Antennas Could Revolutionize Energy Generation with 6G Power U.S. Announces Stricter AI Chip Export Rules to China, Affecting Chip Stocks Berry’s Collaborative Efforts Across the Value Chain to Enhance Recycled Content in Packaging Done And Dusted By NASA